Excellent Energy Storage Performance of ZnO doped (Pb,La)(Zr,Sn,Ti)O3 Based Antiferroelectric Ceramics at an Ultra‐Low Sintering Temperature of 940 °C

Abstract (Pb,La)(Zr,Sn,Ti)O 3 ‐based antiferroelectric ceramics have excellent energy storage performance(more than 90% efficiency), which make them have great application advantages in the field of ceramic capacitors. However, the sintering temperature of (Pb,La)(Zr,Sn,Ti)O 3 ‐based antiferroelectric ceramics is generally above 1250 °C, which limits application as a material for ceramic capacitors. Cu inner electrode has a low co‐firing temperature and high conductivity and a low cost price, making it more competitive in the field of ceramic capacitor inner electrode. Therefore, the first step is to reduce the sintering temperature of (Pb,La)(Zr,Sn,Ti)O 3 ‐based ceramics to below 1000 °C(co‐firing temperature with Cu inner electrode), which is the key and difficult point. In this paper, Pb 0.94 La 0.02 Sr 0.04 (Zr 0.45 Sn 0.47 Ti 0.08 ) 0.995 O 3 (PLSZST) antiferroelectric ceramics are doped with ZnO, which effectively reduce the sintering temperature. Among them, PLSZST‐1 wt% ZnO is sintered at an ultra‐low sintering temperature ( T Sintering = 940 °C), which is 330 °C lower than that of PLSZST( T Sintering = 1270 °C) without doping ZnO. At the same time, PLSZST‐1 wt%ZnO obtain a recoverable energy density of 4.26J cm −3 and an energy efficiency of 95.5% at 230 kV cm −1 . The pulse discharge energy density ( W dis = 3.92 J cm −3 ) and discharge time ( t 0.9 = 351 ns) are obtained at 220 kV cm −1 , and the current density ( C D = 1338A cm −2 ) and power density (P D = 134MW cm −3 ) are obtained at 200 kV cm −1 . The results provide a possible material basis for Cu internal electrode ceramic capacitors.