Advanced Vertical Diamond Diodes with Trench Structure towards High Performances

Diamond based diodes are key components for the high- frequency and high-power applications due to its superior material properties. Until now, various advanced edge termination techniques have been adopted to improve the off- state performance, but the trench structure is not investigated extensively for the diamond-based diodes. Herein, three kinds of diamond vertical diodes with trench structure are designed by using the Silvaco simulation. After optimizing the device parameters, the trenched PN junction diode, the sidewall enhanced trenched JBS as well as the step edge termination PND present optimum Baliga's figure of merit. Those results are beneficial to guide the design and fabrication of diamond based PN junction diodes.