死时间
门驱动器
电压
电气工程
CMOS芯片
材料科学
切换时间
绝缘体上的硅
电子工程
光电子学
工程类
硅
物理
量子力学
作者
Mostafa Amer,Ahmed Abuelnasr,Ahmad Hassan,Ahmed Ragab,Mohamad Sawan,Yvon Savaria
标识
DOI:10.1109/tpel.2023.3341691
摘要
The design of high-voltage (HV) switched-mode power systems (SMPSys) poses multiple challenges, such as minimizing the switching losses and preventing possible shoot-through currents, to achieve efficient and reliable operation. This article introduces a reconfigurable half-bridge gate driver (GD) for SMPSys, with an open-drain output configuration, electrostatic discharge self-protection, and two dead-time management modes to address these challenges. The first mode is an externally tunable fixed dead-time generator (FDTG) capable of achieving a wide dead-time range from 5 to 200 ns. The second mode is a self-adjusting dead-time generator (SDTG), designed to adapt to delay mismatches between the GD's channels, regardless of process, voltage, and temperature (PVT) variations, while minimizing dead-time and preventing cross-conduction. The GD was fabricated in an HV 0.18-μm silicon-on-insulator CMOS process technology, supporting a high-side floating bias voltage rail up to 100 V and occupying a core area of 0.285 mm 2 . It was tested in a buck converter system using a gallium nitride (GaN)-based half-bridge with a switching frequency of 0.5 to 1 MHz. It achieves a total propagation delay of 11.4 ns and a minimum dead-time of 3.6 ns (3× smaller than state-of-the-art) using its SDTG mode. The system achieved a peak efficiency of 90.5% at an output load of 8 W. Notably, the SDTG mode improves the overall efficiency by up to 20% over the FDTG mode, specifically at higher switching frequencies, showing its effectiveness in enhancing the performance of SMPSys.
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