材料科学
有机场效应晶体管
光电子学
有机半导体
半导体
并五苯
晶体管
场效应晶体管
纳米技术
图层(电子)
电压
薄膜晶体管
电气工程
工程类
作者
Tianpeng Yu,Shuyi Hou,Zhenliang Liu,Yiru Wang,Jinhua Yin,Xu Gao,Nannan Liu,Guoliang Yuan,Lei Wu,Yidong Xia,Zhiguo Liu
标识
DOI:10.1002/aelm.202300651
摘要
Abstract Organic field‐effect transistors (OFETs) hold great promise for applications in non‐volatile memories, detectors, and artificial synapses due to the good flexibility and biocompatibility. However, certain drawbacks such as high operating voltages and significant degradation in endurance characteristics have hindered their practical implementations. Herein, a novel approach is proposed to enhance the performance of OFETs by incorporating a bi‐functional n‐type polymer semiconductor interlayer, Poly‐{[N,N'‐bis(2‐octyldodecyl)naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,5′‐(2,2′‐bithiophene)} (N2200), into a pentacene OFET structure. The device exhibits remarkable improvements, with reliable P/E operation cycles of over than 10 4 and a retention time of more than 10 years. On one hand, the inclusion of N2200 as an n‐type semiconductor effectively reduces the height of hole‐injection barrier for trapping and thus reducing the working voltage based on the electrostatic induction theory. On the other hand, n‐type semiconductor N2200 serves as a native hole‐consumption (or hole‐trapping) dielectric, and its narrower bandgap restrains the formation of deep hole‐traps, thus favoring the endurance characteristics of the OFET.
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