材料科学
钙钛矿(结构)
甲脒
碘化物
结晶学
卤化物
带隙
范德瓦尔斯力
扫描透射电子显微镜
化学物理
纳米技术
透射电子显微镜
光电子学
无机化学
化学
分子
有机化学
作者
Mathias Uller Rothmann,Kilian B. Lohmann,Juliane Borchert,Michael B. Johnston,Keith Patrick McKenna,Laura M. Herz,Peter D. Nellist
标识
DOI:10.1002/admi.202300249
摘要
Abstract Metal halide perovskite semiconductors have shown great performance in solar cells, and including an excess of lead iodide (PbI2) in the thin films, either as mesoscopic particles or embedded domains, often leads to improved solar cell performance. Atomic resolution scanning transmission electron microscope micrographs of formamidinium lead iodide (FAPbI3) perovskite films reveal the FAPbI3:PbI2 interface to be remarkably coherent. It is demonstrated that such interface coherence is achieved by the PbI2 deviating from its common 2H hexagonal phase to form a trigonal 3R polytype through minor shifts in the stacking of the weakly van‐der‐Waals‐bonded layers containing the near‐octahedral units. The exact crystallographic interfacial relationship and lattice misfit are revealed. It is further shown that this 3R polytype of PbI2 has similar X‐ray diffraction (XRD) peaks to that of the perovskite, making XRD‐based quantification of the presence of PbI2 unreliable. Density functional theory demonstrates that this interface does not introduce additional electronic states in the bandgap, making it electronically benign. These findings explain why a slight PbI2 excess during perovskite film growth can help template perovskite crystal growth and passivate interfacial defects, improving solar cell performance.
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