Low-frequency noise in nanowires

temperature measurements in conjunction with the Dutta-Horn model of LF noise for both metallic and semiconducting NWs. In semiconducting NWs configured as metal-oxide-semiconductor field-effect transistors, fluctuations in carrier number due to charge exchange with border traps, such as oxygen vacancies and/or their complexes with hydrogen in adjacent or surrounding dielectrics, often dominate or add to bulk noise sources.