Harmonic Generation in Periodically Oriented Gallium Nitride
作者
S. R. Bowman,Christopher G. Brown,Jennifer K. Hite,Jaime A. Freitas,Francis J. Kub,Charles R. Eddy,I. Vurgaftman,J. R. Meyer,Jacob H. Leach,Kevin Udwary
标识
DOI:10.1364/assl.2016.atu5a.3
摘要
Periodically oriented GaN (PO-GaN) devices have been fabricated and tested in order to obtain quasi-phase matched frequency conversion. This report discusses recent measurements of second harmonic generation resonances and characterization of the PO-GaN devices.