光电流
材料科学
非晶硅
光致发光
太阳能电池
光电子学
薄膜
硅
纳米晶硅
无定形固体
晶体硅
纳米技术
化学
结晶学
作者
Jinjoo Park,Youngkuk Kim,Shaikh Mohammad Iftiquar,Chonghoon Shin,Sunwha Lee,Junhee Jung,Junsin Yi
标识
DOI:10.7567/jjap.52.10mb14
摘要
In this paper, we report the stability of hydrogenated amorphous silicon (a-Si:H) thin films and solar cells for various carrier injections. The intrinsic films were prepared with different hydrogen dilutions. We observed that the a-Si:H film had a 25.4% decline in photocurrent due to the carrier injection. The photoluminescence peak within 1.1 to 1.7 eV increased towards the lower photon energy, due to the bias stress. The Urbach energy for the film degraded from 59 to 85 meV under a similar condition. We also observed a 24% drop in efficiency of the solar cell, due to a forward bias stress for 10 h.
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