电源抑制比
低压差调节器
调节器
跌落电压
CMOS芯片
电压调节器
线性调节器
电气工程
噪音(视频)
辍学(神经网络)
电压
电子工程
计算机科学
工程类
放大器
化学
人工智能
基因
生物化学
图像(数学)
机器学习
作者
Kae Ann Wong,David J. Evans
标识
DOI:10.1109/esscir.2006.307507
摘要
An integrated low-noise, high power supply rejection ratio (PSRR), low-dropout (LDO) linear regulator has been developed in Texas Instruments' (TI) 130nm CMOS technology. The LDO regulator is capable of producing a regulated output voltage of 2.8 V from a Li-ion battery supply, with a dropout voltage of 200 mV while supplying a load current of 150 mA. The LDO regulator features > 65 dB PSRR at 20 kHz, and > 40 dB up to 1 MHz. The LDO regulator also features output noise performance of < 350 nV rms /radicHz at 100Hz. The LDO die area is 0.166 mm 2 and the maximum no-load power consumption is 450μW.
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