Ultra Clean Processing of Silicon Surfaces : Proceedings of the Fourth International Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS'98), held in Ostend, Belgium, September 21-23,1998 Vols. 65-66 Vols.65-66

These proceedings try to cover all aspects of ultra-clean Si-technology: cleaning, contamination control, Si-surface chemistry and topography, and its relationship to device performance and process yield. New areas of concern included, cleaning at the interconnect level, resist strip and polymer removal (dry and wet), cleaning and contamination aspects of metallization, wafer backside cleaning and cleaning after Chemical-Mechanical-Polishing (CMP). Wet cleaning processes are still the dominant technology, despite the new results that have been obtained using dry cleaning processes. The conference also looked at the topic of ozonated DI-water as a replacement for hydrogen peroxide, or even sulfuric-based mixtures, which could potentially offer economical and environmental savings.