Fully analytical compact model for the Q–V and C–V characteristics of cylindrical junctionless nanowire FETs

This paper develops a new compact model for the Q–V and C–V characteristics of cylindrical junctionless nanowire FETs in which the nanowire radius is large enough, in such a way that quantum confinement effects can be neglected. Our model is fully analytical and valid for all bias regimes, i.e., subthreshold, partial depletion, and accumulation. The obtained Q-V and C–V characteristics, as well as their derivatives, are continuous across the full range of bias voltages. The model is fully physics-based, with no fitting parameters, and it is very intuitive, since it relies on the understanding of the device as a gated resistor. Model validation is performed against previous results in the literature, demonstrating very good agreement.