A simple high-performance fully nonfused ring electron acceptor with a planar molecular backbone

We designed two simple fully nonfused ring electron acceptors 4T-OEH and 4T-EH with 3,4-bis(alkoxy)thiophene and 3,4-dialkylthiophene π-bridge units, respectively, which can be modularly synthesized with only four high-yield steps. With the help of intramolecular S-O noncovalent interaction, 4T-OEH tends to form a planar molecular backbone, which is beneficial for the electron delocalization and charge transport. Besides, the neat 4T-OEH film displays a more ordered molecular packing and obviously red-shifted absorption after thermal annealing. Compared with 4T-EH, 4T-OEH based devices can form more homogenous phase morphology, higher and more balanced hole and electron mobilities. The optimal OSCs based on 4T-OEH can generate an excellent PCE of 12.12%, which is much higher than 4T-OEH based ones (7.36%). It is worth noting that the figure-of-merit values of 4T-OEH is much higher than the star acceptors (ITIC and Y6), demonstrating its high potential for future practical application. Our work has demonstrated that we can tune the backbone planarity, solubility and packing behavior of acceptor molecules via optimizing their lateral substituents to obtain high efficiency and low-cost fully nonfused ring electron acceptors.