材料科学
基质(水族馆)
互连
焊接
烧结
多孔性
半导体
复合材料
热膨胀
微观结构
弹性模量
光电子学
海洋学
计算机科学
地质学
计算机网络
作者
John G. Bai,Zhiye Zach Zhang,J.N. Calata,Gongxuan Lü
出处
期刊:IEEE Transactions on Components and Packaging Technologies
[Institute of Electrical and Electronics Engineers]
日期:2006-09-01
卷期号:29 (3): 589-593
被引量:316
标识
DOI:10.1109/tcapt.2005.853167
摘要
A nanoscale silver paste containing 30-nm silver particles that can be sintered at 280degC was made for interconnecting semiconductor devices. Sintering of the paste produced a microstructure containing micrometer-size porosity and a relative density of around 80%. Electrical and thermal conductivities of around 2.6times10 5 (Omegamiddotcm) -1 and 2.4W/K-cm, respectively, were obtained, which are much higher than those of the solder alloys that are currently used for die attachment and/or flip-chip interconnection of power semiconductor devices. The sintered porous silver had an apparent elastic modulus of about 9GPa, which is substantially lower than that of bulk silver, as well as most solder materials. The lower elastic modulus of the porous silver may be beneficial in achieving a more reliable joint between the device and substrate because of increased compliance that can better accommodate stress arising from thermal expansion mismatch
科研通智能强力驱动
Strongly Powered by AbleSci AI