Dependence of x-ray sensitivity of direct conversion x-ray detectors on x-ray exposure and exposure history

The dependence of the x-ray sensitivity of a-Se based x-ray image detectors on repeated x-ray exposures and exposure history is studied by considering deep trapping of charge carriers, trapped charges due to previous exposures, bimolecular recombination, space charge effects and electric field dependent electron-hole pair creation energy. We numerically solve the continuity equations of both holes and electrons, trapping rate equations, and the Poison equation across the photoconductor for long pulse x-ray exposures. The electric field distribution across the photoconductor and the relative x-ray sensitivity as a function of cumulated x-ray exposure have been studied for both mammographic and chest radiographic applications. The electric field distribution across the photoconductor has been found to vary widely for high exposures. The relative x-ray sensitivity decreases with increasing cumulated x-ray exposure and tents to saturate. The sensitivity reduction at negative bias is more pronounced than at positive bias.