磨料
半导体器件制造
表面粗糙度
薄脆饼
过程(计算)
表面光洁度
作者
G. Nanz,L.E. Camilletti
摘要
This paper gives a survey of the status of today's modeling of chemical-mechanical polishing (CMP). Most existing models describe specific aspects of CMP, such as the flow of the slurry or the bending of the polishing pad. However, as yet no model describes the entire available process. This paper critically reviews existing models with respect to generality, in particular, the different assumptions of the models are investigated. Furthermore, the models are compared and the controversial treatment of physical effects is discussed.>
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