薄脆饼
拉曼光谱
光学显微镜
基面
衍射
材料科学
结晶学
晶体生长
位错
显微镜
光学
化学
复合材料
光电子学
扫描电子显微镜
物理
作者
Takahiro Nakano,Naoto Shinagawa,Masahiro Yabu,Noboru Ohtani
标识
DOI:10.1016/j.jcrysgro.2019.03.027
摘要
The distribution of basal plane dislocations (BPDs) in physical vapor transport (PVT) grown 4H-SiC crystals has been investigated using Raman microscopy and X-ray topography. X-ray topography observations of (1 1 2¯ 0) wafers vertically sliced along the growth direction from the crystals revealed that there existed almost periodically arranged layers with a high density of BPDs (bunched BPDs) in PVT-grown 4H-SiC crystals. These layers were characterized using Raman microscopy and high resolution X-ray diffraction, and it was found that large tensile and compressive stresses were associated with the layers. The stresses showed characteristic variations along the basal plane as well as the growth direction. Based on these results, the formation and multiplication processes of BPDs during PVT growth of 4H-SiC crystals are elucidated.
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