Thermodynamic Analysis of the Behavior of Trimethyl Borate as a Precursor for Chemical Vapor Deposition of Boron-Containing Films

The chemical vapor deposition (CVD) of boron-containing films involving the trimethyl borate precursor has been modeled in the ranges of pressures 0.03 ≤ Р , Torr ≤ 760 and temperatures 300 ≤ Т , K ≤ 2000. The CVD diagram of this system was found to feature existence fields of the following phase complexes: В + В 4 С, В4С + В 2 О 3 , С + В 2 О 3 + В 4 С, С + В 2 О 3 , С + В 2 О 3 + НВО 2 , С + НВО 2 , С + В 4 С, and a В 4 С phase.