Chemical Control of SrLi(Al1–xGax)3N4:Eu2+ Red Phosphors at Extreme Conditions for Application in Light-Emitting Diodes

Phosphor materials are promising candidates for white-light-emitting diode applications. High-quality phosphor materials must be synthesized under extreme conditions. In this study, a series of SrLi(Al 1– x Ga x ) 3 N 4:Eu 2+ (GSLA) narrow-band emission red phosphors are successfully synthesized under 1000 atm nitrogen gas atmosphere through the hot isostatic press, which cannot be achieved under low pressure. Successful Ga incorporation is confirmed by X-ray diffraction and Rietveld refinement. Phonon repetition structure and detailed thermal properties are analyzed by temperature-dependent photoluminescence intensity and lifetime. The structural ordering and rigidity are comprehensively evaluated by Raman spectra. The blue shift of the photoluminescence spectra enhances the luminous efficacy of radiation, making GSLA a potential candidate for practical application. This study promotes the research on materials synthesized under extreme conditions and the development of novel phosphor materials.