灰化
电介质
材料科学
等离子体
等离子体刻蚀
电容
低介电常数
绝缘体(电)
高-κ电介质
制作
蚀刻(微加工)
复合材料
电容器
光电子学
电气工程
化学
电极
电压
病理
物理化学
工程类
物理
量子力学
替代医学
图层(电子)
医学
作者
Yi-Lung Cheng,Chih-Yen Lee,Chiao-Wei Haung
出处
期刊:IntechOpen eBooks
[IntechOpen]
日期:2019-02-27
被引量:3
标识
DOI:10.5772/intechopen.79494
摘要
Low dielectric constant (low-k) materials as an interconnecting insulator in integrated circuits are essential for resistance-capacitance (RC) time delay reduction. Plasma technology is widely used for the fabrication of the interconnects, such as dielectric etching, resisting ashing or stripping, barrier metal deposition, and surface treatment. During these processes, low-k dielectric materials may be exposed to the plasma environments. The generated reactive species from the plasma react with the low-k dielectric materials. The reaction involves physical and chemical effects, causing degradations for low-k dielectric materials. This is called “plasma damage” on low-k dielectric materials. Therefore, this chapter is an attempt to provide an overview of plasma damage on the low-k dielectric materials.
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