石墨烯
杰纳斯
异质结
肖特基势垒
欧姆接触
材料科学
肖特基二极管
凝聚态物理
范德瓦尔斯力
偶极子
光电子学
纳米技术
图层(电子)
化学
物理
二极管
分子
有机化学
作者
Liemao Cao,Yee Sin Ang,Qingyun Wu,L. K. Ang
摘要
Janus transition metal dichalcogenides with a built-in structural cross-plane asymmetry have recently emerged as a new class of two-dimensional materials with a large cross-plane dipole. By using the density functional theory calculation, we report the formation of different Schottky barriers for Janus PtSSe and graphene based van der Waals heterostructures, where the Schottky barrier height (SBH) and type of contact can be controlled by adjusting the interlayer distance, by applying an external electric field, and by having multiple layers of Janus PtSSe. It is found that the effects of tuning are more prominent for SPtSe/graphene as compared to SePtS/graphene. Besides, a transition from n-type Schottky contact to p-type Schottky contact and to Ohmic contact is also observed in the SPtSe/Gr heterostructure for different SPtSe stackings from 1 layer, to 2- and 3-layers, respectively. Our findings indicate that the SPtSe/graphene heterostructure is a suitable candidate for applications that require a tunable SBH.
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