Microscopic Mechanism for the Photo-Creation of Dangling Bonds in a-Si:H

We present a microscopic model for the photocreation of silicon dangling bonds, taking into account the combined effects of breaking of weak bonds, Si–H bond switching, and H-tunneling which occur under intense optical excitation. We also discuss the kinetics of the photocreation of silicon dangling bonds, taking into account that the other defects than dangling bonds are photocreated.