石墨烯
材料科学
镍
热导率
声子
电子
电子设备和系统的热管理
电子迁移率
金属
凝聚态物理
工作(物理)
电子传输链
纳米技术
光电子学
复合材料
热力学
冶金
化学
机械工程
物理
量子力学
工程类
生物化学
作者
Jing Zhou,Kunming Yang,Bihuan Yang,Boan Zhong,Songsong Yao,Yayun Ma,Jian Song,Tongxiang Fan,Dawei Tang,Jin Zhu,Yue Liu
标识
DOI:10.1021/acsami.2c07796
摘要
As a typical two-dimensional material, graphene (Gr) has shown great potential to be used in thermal management applications due to its ultrahigh in-plane thermal conductivity (k). However, low interface thermal conductance (ITC) between Gr and metals to a large extent limits the effective heat dissipation in Gr-based devices. Therefore, having a deep understanding on heat transport at Gr-metal interfaces is essential. Because of the semimetallic nature of Gr, electrons would possibly play a role in the heat transport across Gr-metal interfaces as heat carriers, whereas, However, how much the electron can participate in this process and how to optimize the total ITC considering both electron and phonon transportations have not yet been revealed yet. Therefore, in this work, hydrogenation-treated Gr (H-Gr) was sandwiched by nickel (Ni) nanofilms to compare with the samples containing pure Gr for investigating the interfacial electron behaviors. Moreover, both Gr and H-Gr sets of the samples were prepared with different layer numbers (N) ranging from 1 to 7, and the corresponding ITC was systematically studied based on both time-domain thermoreflectance measurements and theoretical calculations. We found that a larger ITC can be obtained when N is low, and the ITC may reach a peak value when N is 2 in certain circumstances. The present findings not only provide a comprehensive understanding on heat transport across Gr-metal interfaces byconsidering a combined effect of the interfacial interaction strength, phonon mode mismatch, and electron contributions, but also shed new lights on interface strucure optimiazations of Gr-based devices.
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