A Quad-Band GSM/EDGE-Compliant SiGe-Bipolar Power Amplifier with 35.9 dBm / 32.3 dBm Output Power at 56 % / 44 % PAE in Low/High-Band

A standard-compliant integrated quad-band GSM/EDGE radio frequency power amplifier for 824–915MHz and 1710–1910MHz has been realized in a 0.35-μm SiGe-Bipolar technology. The chip integrates two single-ended 3-stage power amplifiers and a bias-control circuit for power control, band select and mode dependent quiescent currents. At 3.3V a saturated output power of 35.9 dBm is achieved at 830MHz and 32.3dBm at 1710MHz. The respective peak PAE is 56% for low-band and 44% for high-band.