跨阻放大器
图像传感器
像素
探测器
光电子学
帧速率
电容器
CMOS传感器
材料科学
CMOS芯片
电容感应
点间距
X射线探测器
放大器
物理
电气工程
运算放大器
光学
工程类
电压
作者
Alper Ercan,Mark W. Täte,Sol M. Grüner
标识
DOI:10.1109/jsen.2014.2359153
摘要
This paper describes a solid-state image sensor for high-speed X-ray imaging. The sensor is made up of a light sensitive detector layer bump-bonded to a readout integrated circuit (ROIC). The detector layer is high resistivity n-type silicon and is fully depleted in operation. The p-implanted islands are used to define pixel regions with 100-μm × 100-μm area. The detector layer contains 852 × 209 pixels indium bump-bonded to four identical CMOS ROICs. Each ROIC contains 213 × 209 pixels and is fabricated using a 0.25-μm CMOS process. The ROIC utilizes a capacitive transimpedance amplifier-type front-end coupled to a switched capacitor analog memory. This architecture allows storage of eight frames for high-speed burst imaging of up to a million frames per second, followed by a slower multiplexed readout. Details of the sensor design and operation are presented together with characterization results.
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