STUDIES OF SURFACE GRINDING TEMPERATURE AFFECTED BY DIFFERENT GRINDING WAYS OF SILICON WAFER

The surface grinding temperature of the silicon wafer ground by diamond wheels is studied.Rudimentally,the properties of the surface grinding temperature generated by two grinding methods,ground by straight and cup wheels respectively,are analyzed.In addition,considering the effects of grain size and grinding depth on surface grinding temperature during these two grinding processes,significant results and conclusions are obtained from experimental research.