A Facile Synthesis of Cr Doped WO<sub>3</sub> Nanostructures, Study of their Current-Voltage, Power Dissipation and Impedance Properties of Thin Films

Present work illustrates synthesis of Cr doped WO 3 nanostructures (NS) (2 wt. %, 4 wt. % and 6 wt. %) by co precipitation method using surfactants and reported enhanced impedance, capacitance-voltage and current-voltage (I-V) characteristics. NS were characterized by cyclic voltammetry (CV), scanning electron microscopy (SEM), X-ray diffraction (XRD), UV-Visible (UV-Vis) spectroscopy, pelletized samples performed I-V, C-V and impedance measurements. Impedance results reveal that the pelletized samples of highest doped Cr showed remarkable increase in admittance with respect to the biased voltage. I-V characteristics of highest doped Cr exhibited enhanced surface conductivity as compared with applied current. The output power considerably increases for the 6 wt. % of Cr doped WO 3 and doping percentage of Cr increases surface conductivity, power output, admittance considerably enhances in the material matrix. This work demonstrated that Cr doped WO 3 has more sensitivity towards I-V, C-V and impedance value considerably varies with the applied bias voltage. The limitation is not certain in case of doped nanomaterials of Cr-WO 3 , since these materials possesses nonlinear properties and can find applications in the diversified filed of nano electronics. The authors reported work can be a key guide for the upcoming researchers in the area of biomedical devices, nanoelectronics, sensors, wherein Cr-WO 3 NS finds applications because of its enhanced I-V, C-V, Impedance characteristics. The work has been carried out to understand the electrical and electronic properties of doped nanomaterials in the original work place and analysis has been carried out at various institutions where the provisions for the experimentation is being made.