Flexible Neuromorphic Analog Memristor Based on Nanostructured Copper Iodide Film

Neuromorphic memristors are capable of adaptively changing their resistance depending on the history of voltage or current application and, for this reason, are natural candidates for the role of artificial synapses as key components for implementing learning processes. The magnitude, duration, frequency, and polarity of the voltage applied to memristors affect their temporal dynamics. The aim of this work is to create a flexible analog neuromorphic memristor with a resistive switching layer made of a nontoxic, inexpensive, and accessible material—copper iodide (CuI), the nanostructured film of which was fabricated using a scalable, automatic successive ionic layer absorption and reaction method. The memristor presented here is inherently analog and does not require tuning due to the nanoflake CuI morphology and numerous defects, including those caused by sulfur doping, and thus may find direct application in future neural interface technologies. The experiments conducted in this study confirmed the ability of this memristor to mimic nociceptor‐like plasticity of synaptic maladaptation and sensitization in biology, exhibit spike‐rate‐dependent plasticity and dynamic synaptic responses such as learning, forgetting, and facilitation of relearning by transferring information from short‐term to long‐term memory, which is critical for cognitive processes and holds promise for future neuromorphic computing.