动态范围
高动态范围
图像传感器
CMOS芯片
宽动态范围
像素
功率消耗
航程(航空)
功率(物理)
电子工程
材料科学
电气工程
共形映射
光电子学
高动态范围成像
低功耗电子学
图像(数学)
计算机科学
CMOS传感器
帧速率
色调映射
工程类
能源消耗
光学
作者
T. Yamanaka,R. Nakamura,S. Kasashima,C. Tokumitsu,S. Kuwahara,M. Kitajima,R. Matano,T. Ishizaki,M. Aoki,N. Yagi,H. Iga,S. Nabeyoshi,M. Takami,Y. Sakano,Y. Oike
标识
DOI:10.1109/iedm50572.2025.11353610
摘要
A 3840×2160 CMOS image sensor with a 2.1 μm pixel pitch achieves 129 dB single-exposure dynamic range (SEDR) at 85 °C and 29 dB junction SNR at 105° C using only triple readout signals. The sensor employs sub-pixel architecture enhanced with full-depth deep-trench isolation, p-type conformal doping, and 3D-MIM technology. These innovations substantially increase full-well capacity while maintaining excellent linearity. The proposed design reduces power consumption and improves operational speed, making it well-suited for automotive applications requiring high dynamic range imaging under high temperature conditions.
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