Modeling of High Frequency and High Efficiency GaN HEMT Power Amplifiers Based on the Developed Transistor Model (EEHEMT)

This paper presents the power amplifier using GaN High Electron Mobility Transistor (HEMT) technology for Monolithic Microwave Integrated Circuit (MMIC). The input and output impedances are 50 Ohm. The supply voltage is equal to 3 V. The power amplifier provides maximum frequency 73 GHz and gain 6.08 dB in linear mode. In the nonlinear mode, power amplifier provides power added efficiency (PAE) equaled to 64.66% while power input is equal to 6.85 dBm. When power amplification is increased then supply voltage is 7V and power input is 12.45 dBm, power amplifier provides power added efficiency (PAE) equaled to 73 %. The amplifier was designed by using Microwave Office (AWR) with model EEHEMT for the transistor.