光电二极管
二极管
光电探测器
材料科学
有机半导体
光电子学
电容
有机发光二极管
香豆素
半导体
兴奋剂
分析化学(期刊)
化学
图层(电子)
电极
纳米技术
有机化学
物理化学
作者
R.O. Ocaya,Abdullah G. Al‐Sehemi,Ahmed A. Al-Ghamdi,Farid El-Tantawy,F. Yakuphanoğlu
标识
DOI:10.1016/j.jallcom.2016.12.381
摘要
Coumarin doped with poly(3-hexylthiophene)/p-Si photodiodes were prepared by the drop-casting technique. The current–voltage characteristics of the prepared diodes with the structure of Al/P3HT:Coumarin/p-Si/Al diodes were investigated under dark and various illumination intensities using both I–V and C–V methods. Using both illuminated DC and transient I–V and C–V measurements, the photocurrents are shown to depend on light intensity with the P3HT:Coumarin ratio influencing photoresponsivity. The photocurrents increase with increasing illumination intensity. C–V measurements show that the capacitance of the diode depends on voltage, frequency and illumination, indicating the existence of a continuous distribution of interface states that can be described in terms of organic-organic polymer blend domains in additional to the well studied metal-semiconductor interface states. The best responses were found to be for the diode having 10% Coumarin weight. These results suggest that the Al-p-Si/P3HT:Coumarin/Al diode can be used as a photosensor.
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