Comparison of temperature-dependent dielectric characteristic in two different (Ba,Sr)TiO3 films

A high dielectric constant of 2500 near room temperature was observed in (Ba０.５Sr０.５)TiO３ (BSTO) film prepared by pulsed-laser deposition (PLD) on Pt/Ti/SiO２/Si (100) substrate at 550℃ in N2 atmosphere. The dielectric constant is weakly temperature dependent above 200 K. The dielectric behavior of this film is different from the BSTO film deposited in the O2 atmosphere, but very similar to that reported for the so-called “colossal” dielectric constant materials, such as CaCu3Ti4O12. The film prepared in O2 atmosphere at 650℃ shows normal ferroelectric phase transition, which are fitted with Curie-Weiss law. However, for the film prepared in N2 atmosphere at 550℃, the temperature dependence of dielectric relaxation can be characterized by a thermally excited relaxation process. Such anomalous dielectric response of the BST films is ascribed to the formation of the Schottky barrier between the metallic electrode and the film surface.