范德瓦尔斯力
维数之咒
材料科学
半导体
凝聚态物理
反键分子轨道
带隙
纳米技术
光电子学
物理
计算机科学
分子
量子力学
机器学习
电子
原子轨道
作者
Roman S. Stepanov,V. A. Gerega,A. V. Suslov,Alexander V. Kolobov
标识
DOI:10.1002/pssr.202200430
摘要
2D materials with van der Waals (vdW) gaps between covalently bonded blocks are in the focus of modern semiconductor science and technology. Of special interest is the possibility to control their properties through the vdW gap reconfiguration. Herein, using first‐principles simulations it is demonstrated that uniaxial compression of GaSe, counterintuitively, does not serve to close the gap but, instead, changes the dimensionality from 2D to quasi‐1D, with flat GaSe chains oriented along the applied pressure. The structural change is accompanied by drastic changes in electronic structure. The inability to close the vdW gap to the antibonding nature of Se–Se interactions is attributed.
科研通智能强力驱动
Strongly Powered by AbleSci AI