光探测
光电子学
材料科学
钙钛矿(结构)
晶体管
场效应晶体管
电流密度
制作
光电探测器
光子学
半导体
纳米技术
电气工程
化学
电压
物理
医学
替代医学
量子力学
病理
结晶学
工程类
作者
Haihong Xie,Ping-An Chen,Xincan Qiu,Yu Liu,Jiangnan Xia,Jing Guo,Huan Wei,Zhenqi Gong,Jerry Ding,Yuanyuan Hu
摘要
Metal halide perovskite field-effect transistors (MHP-FETs) are of great interest due to the fascinating photonic and electronic properties of perovskite semiconductors, and their low-temperature solution processability. However, present MHP-FETs suffer from the low current-density problem due to the low device mobility, which is an obstacle to their applications. Herein, we tackle this problem by adopting the vertical field-effect transistor (VFET) structure for the fabrication of MHP-VFETs. We show MHP-VFETs can be achieved by employing the MXene (Ti3C2Tx) film as perforated source electrodes, which are essential elements in VFETs, via a simple solution process. The MHP-VFETs exhibit high on/off ratio of 105 and, moreover, show large current density of over 6 mA cm−2, thanks to the ultrashort channel length of the VFETs. Furthermore, the devices are found to exhibit excellent photodetection performance with photoresponsivity of 2.1 × 103 A W−1 and detectivity of 7.84 × 1015 Jones. This study not only provides a route to achieve high-performance MHP-FETs but also shows the very promising prospects of MHP-VFETs for applications as backplane thin-film transistors and high-performance phototransistors.
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