High-Performance Monolayer-2D Stacked Nanosheet FETs with High ION~ 451 μA/μm and ION/IOFF > 109

In this work, stacked nanosheet FETs with monolayer MoS2 channels are presented. At a channel length of 40 nm, the transistor exhibits a remarkable $\mathrm{I}_{\text{ON}}-451\ \mu \mathrm{A}/\mu \mathrm{m}$ at $\mathrm{V}_{\text{DS}}=1\ \mathrm{V}$, achieved with two tiers of monolayer-MoS2 channels. The device has a record $\mathrm{I}_{\text{ON}}/\mathrm{I}_{\text{OFF}} > 10^{9}$ and a yield of 96.59%, which shows good electro-static control in the nanosheet channels. We compare these results to dual gate 2D FETs and show how learnings on the planar devices can be utilized in a gate-all-around case. The successful demonstration of stacked 2D nanosheet FETs with high performance further extends Moore's Law scaling with the future 2D CFETs application.