锌黄锡矿
捷克先令
太阳能电池
光电子学
材料科学
纳米结构
量子阱
量子效率
光伏系统
太阳能电池效率
纳米技术
光学
电气工程
物理
工程类
激光器
作者
Benisha Chris A,Soumyaranjan Routray,Yehia Massoud
标识
DOI:10.1109/jsen.2023.3287595
摘要
Nanostructures in kesterite solar cells are incorporated for performance enhancement. As high recombination limits the efficiency of kesterite-based CZTS/Se solar cell, substituting Ge for Sn as Cu-Zn-Ge-S/Se (CZGS/Se) increases the optical characteristics and solar cell overall performance. This research analyses multi-quantum-well solar cell (MQWSC) using Cu-Zn-Ge-S as a barrier material and Cu-Zn-Ge-Se as a well material. Introducing quantum wells (QWs) as (2, 10, 20, 30, 40, 50, 70, 100 QWs) in CZGS kesterite groups highlights the novelty of device. To enhance the performance, its optic, electric, and structural characteristics are widely researched across nanostructures. An examination of the carrier dynamics of the device is carried out by varying various parameters. By introducing various loss mechanisms, including deep defect and shallow defect, the device's worst case operation is also evaluated. A remarkable efficiency of 29% without defect and 20% with defective states was obtained from the proposed structure, which signifies new route to facilitate the performance of photovoltaic (PV) cells for the next generation.
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