Lifetime of photoexcited carriers in space-controlled Si nanopillar/SiGe composite films investigated by a laser heterodyne photothermal displacement method

材料科学 电子迁移率 纳米柱 光电子学 光热治疗 半导体 纳米孔 热导率 激光器 载流子寿命 电子 纳米技术 纳米结构 光学 复合材料 物理 量子力学
作者
Tomoki Harada,Daisuke Ohori,Kazuhiko Endo,Seiji Samukawa,Tetsuo Ikari,Atsuhiko Fukuyama
出处
期刊:Journal of Applied Physics [American Institute of Physics]
卷期号:133 (12) 被引量:1
标识
DOI:10.1063/5.0146578
摘要

Thermal management has become more critical as semiconductor devices are miniaturized. In metal–oxide–semiconductor field-effect transistors, the problem is the reduction in electron mobility in the channel layer owing to the temperature rise caused by heat generation near the channel-drain region. Focusing on the mean free paths of phonons and electrons in Si, nanostructures of a few 10 nm may only hinder heat propagation without affecting electron transportation. Therefore, inserting nanostructures into the channel layer may prevent a temperature rise and maintain a higher electron mobility. To discuss the relationship between the spacing between the nanopillars (NPs) and the heat generation and carrier behavior of the Si-NP/SiGe composite film, samples with NP spacings of 13, 27, or 47 nm were prepared. We previously confirmed that the thermal conductivity of the Si-NP/SiGe composite film decreased as NP spacing narrowed. The NPs scattered phonon propagation and suppressed heat propagation. However, carrier transport properties such as electrical conductivity, carrier mobility, and carrier lifetime have never been discussed. The laser heterodyne photothermal displacement method was used to examine the effect of nanostructures on carrier mobility and carrier lifetime of Si-NP/SiGe composite films. We observed that the carrier lifetime became longer when the NP spacing was comparable to the electron mean-free path of approximately 27 nm.

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