38‐1: A High Performance and High Stability Oxide TFT with a Novel Device Structure Using Atomic Layer Deposition

The metal oxide thin film transistors have achieved high mobility using atomic layer deposition method by adjusting the metal ratios. Through employing a stacked gate insulator structure, the interface characteristics are improved, and the diffusion of H is reduced. As a result, the PBTS of high mobility oxide TFTs has been optimized.