Electrical Transport at n-Ga2O3/n-SiC Hetero-Interface Constructed by Hydrophilic and Surface Activated Bonding

The n-Ga2O3/n-SiC (GaOSiC) hetero-structure was achieved by ion-cutting process based on surface activated bonding (SAB) and hydrophilic bonding (HB) techniques. The HB GaOSiC hetero-interface showed an amorphous layer of only ~1 nm, contributing to 16.87% of the total on-resistance (Ron,total) for the GaOSiC structure, which is much less than that of the SAB hetero-interface. The low interface resistance (Ri) of HB GaOSiC structure provides a feasible path towards the vertical β-Ga2O3 power electronics with high power operating capability and acceptable heat dissipation performance.