A Review on Hybrid Bonding Interconnection and Its Characterization

With considering the performance computing growing exponentially, heterogeneous integration becomes as a solution for combining more logic, memory, and specialty chiplets in each area to accelerate computing. Hybrid bonding interconnection (HBI) is one of the most important technologies to heterogeneous integration, which is defined as a bonding along with a “hybrid” interface (metal-metal and dielectric-dielectric). It enables a connection from a silicon chip to another with direct metal pad to pad connection. The technology increases the density of the contact and shorten the interconnect distance between components. In this paper, we review the modern technologies of Hybrid bonding interconnection with characterization of the contact interfaces of metal to metal and dielectric to dielectric. Also, we raise a novel method to perform a low cost, organic dielectric based, low process temperature hybrid bonding interconnection for wider packaging application needs.