Atom(片上系统)
曲面(拓扑)
领域(数学)
材料科学
梁(结构)
磁场
原子物理学
凝聚态物理
分子物理学
物理
光学
几何学
量子力学
计算机科学
并行计算
数学
纯数学
作者
K. Oshima,Wataru Nomura,Taisei Kato,Chiemi Oka,Junpei Sakurai,Seiichi Hata
标识
DOI:10.35848/1347-4065/add5af
摘要
Abstract In surface activated bonding (SAB), the surfaces of the materials to be bonded are activated by fast atom beam (FAB) irradiation in a vacuum, and then brought into contact with each other to achieve room-temperature and low-pressure bonding. The conventional FAB source used for SAB, can be used for only a short time due to bonding failures caused by carbon particle adhesion to the bonding surface. Additionally, there has been a growing need in recent years for a FAB source that can irradiate a larger area. In this study, we developed a unidirectional magnetic field-applied FAB source that can solve these problems simultaneously. The motion of charged particles in the plasma is controlled by applying magnetic fields in a unidirectional manner to the FAB source, resulting in highly efficient Ar-FAB irradiation and a reduction in the wear of the inner carbon walls caused by Ar+ ion sputtering.
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