GaAs Mid-IR Electrically Tunable Metasurfaces

In this work, we explore III-V based metal–semiconductor–metal structures for tunable metasurfaces. We use an epitaxial transfer technique to transfer a III-V thin film directly on metallic surfaces, realizing III-V metal–semiconductor–metal (MSM) structures without heavily doped semiconductors as substitutes for metal layers. The device platform consists of gold metal layers with a p-i-n GaAs junction. The target resonance wavelength can be tuned by modifying the geometry of the top metal grating on the GaAs, while systematic resonance tunability has been shown through the modulation of various carrier concentration injections in the mid-IR range. Electrically tunable metasurfaces with multilevel biasing can serve as a fundamental building block for electrically tunable metasurfaces. We believe that our demonstration can contribute to understanding the optical tuning of III-V under various biased conditions, inducing changes in metasurfaces.