4H-SiC ultraviolet photodetector array with vertical MSM configuration

Abstract The increasing demand for ultraviolet (UV) imaging in extreme conditions, such as high temperatures and strong radiation, has spurred advancements in UV photodetector arrays. Traditional metal–semiconductor–metal (MSM) 4 H-SiC UV photodetector array, with their planar structure and M × N electrode connections, face challenges in circuit design. Our research utilizes a vertical design for building the photodetector array, reducing the connections to just M + N , thereby simplifying the circuit design and signal processing. Utilizing semi-insulating 4 H-SiC wafer and TiN electrodes, we developed an 8 × 8 vertical MSM photodetector array. Tested under a 365 nm light source at 10.5 mW cm −2 and a 5 V bias, the array demonstrated low dark currents, high contrasts under illumination, and a 100% operational yield. With average photo current and dark currents of 1.56 × 10 −8 A and 2.94 × 10 −13 A, respectively, the average photo-to-dark current ratio exceeded 5 × 10 4 . Our design effectively minimized sneak path currents and achieved a low crosstalk rate of 0.46%, enabling the capture of clear, high-contrast images. This marks a significant advancement in the application of MSM 4 H-SiC UV photodetectors for imaging in extreme conditions.