薄膜晶体管
脉冲宽度调制
材料科学
CMOS芯片
背光
像素
晶体管
点间距
施密特触发器
电压
光电子学
电气工程
物理
液晶显示器
光学
工程类
复合材料
图层(电子)
作者
Yunfei Liu,Shan Que,Congwei Liao,Jia Fu,Zhibang Song,Lei Lü,Shengdong Zhang
摘要
A pulse‐width‐modulation (PWM) pixel circuit for Micro‐LED display based on low‐temperature poly‐silicon and oxide (LTPO) thin‐film transistor (TFT) is proposed. The PWM falling‐time is reduced to 10 μs, which is only 1/10 of conventional PWM pixel schematics, thanks to the high gain dynamic CMOS inverter for converting data voltage to PWM waveforms and an independent diode‐connected compensation structure for generating constant driving current. The maximum error of PWM conversion and driving current of Micro‐LED is less than 1%, despite VTH shift of oxide TFT ±2 V or VTH variation of LTPS TFT ±1 V. Furthermore, high display resolution above 270 PPI is obtained as the pixel layout reduced to 94 μm×94 μm due to the simplified pixel structure.
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