Saion K. Roy,Han-Mo Ou,Mostafa Gamal Ahmed,Peter Deaville,Bonan Zhang,Naveen Verma,Pavan Kumar Hanumolu,Naresh R. Shanbhag
出处
期刊:Proceedings of ESSCIRC日期:2023-09-11卷期号:: 25-28被引量:6
标识
DOI:10.1109/esscirc59616.2023.10268688
摘要
The accuracy of eNVM in-memory computing (IMC) designs is primarily limited by analog non-idealities. This paper presents an MRAM IMC macro in 22nm equipped with offset-compensating current sensing and a low-overhead statistical error compensation (SEC) block to boost its compute signal-to-noise ratio (SNR). The compute SNR reduces with an increase in inner-dimension of the MVM. An SEC-enabled SNR boost of 2.7-to-6 dB is obtained over different operating points. This boost can be traded-off to realize a $ 5\times$ decrease in energy/lb-OP including an SEC energy overhead of 0.S%. Finally, we demonstrate an SEC-enabled neural network (NN) accuracy boost from 74.8% to 82.0% for CIFAR-10 over ResNet20 without on-chip training.