单层
自旋电子学
极化(电化学)
材料科学
等离子体子
光电子学
激发
激发极化
磁场
圆极化
电场
红外线的
光学
纳米技术
凝聚态物理
物理
化学
铁磁性
电阻率和电导率
量子力学
物理化学
作者
Zefeng Chen,Fuhuan Shen,Zhenghe Zhang,Kai Wu,Yuxuan Jin,Mingzhu Long,Shaojun Wang,Jianbing Xu
出处
期刊:
[Wiley]
日期:2023-10-10
卷期号:3 (1)
被引量:1
标识
DOI:10.1002/apxr.202300062
摘要
Abstract The unique band structure of monolayer transition metal dichalcogenides (TMDC) provides an important platform for spintronic and valleytronic devices. Various approaches, such as in‐plane electric field and out‐of‐plane magnetic field, have been proposed to actively control the valley polarization. In this work, we propose a synergistic effect involving chiral near‐field interactions and hot carrier injection to actively control the valley polarization emission of WSe 2 at room temperature (RT). The degree of valley polarization is enhanced from near zero (for pure WSe 2 ) to 20% under non‐resonant optical excitation (532 nm) when monolayer WSe 2 is coupled with the chiral near field of plasmonic metasurface. More importantly, the application of near‐infrared light (wavelength of 970 to 1600 nm) illumination further enhances the valley polarization from 20% to 30%, which is attributed to plasmonic‐induced hot carrier injection from the metasurface to WSe 2 . The synergistic effect of the chiral near field and infrared light pumping offers another strategy to manipulate the valley polarization emission in monolayer TMDs at room temperature, paving the way for future applications of opto‐valleytronic/spintronic devices based on these 2D materials.
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