Re-Examination of Hot Carrier Degradation Mechanism in Ultra-Scaled nFinFETs

In this study, the channel length dependence of hot carrier degradation (HCD) in ultra-scaled nFinFETs is experimentally investigated with the self-heating correction. By electrical characterizations of nFinFETs with different channel lengths, the novel insight into the HCD mechanism is proposed upon considering the trap behaviors, including both interface traps and oxide traps. Our experimental results show that the proportion of interface traps in total traps is strongly dependent on the channel length. Furthermore, the interface traps induced by HCD are located near the source side in ultra-scaled nFinFETs, which is different from the phenomena in long channel devices.