Perfection of epitaxial layers of gallium arsenide grown in a temperature-gradient field

The authors pose the following problem: to construct statistical models relating the dislocation density to the temperature of the process, the thickness of the liquid zone, and the impurity concentration and to estimate with their help the contribution of the indicated factors to the formation of the dislocation structure of undoped epitaxial layers of gallium arsenide. It is shown that the effect of the carrier concentration on the dislocation density decreases as the temperature is raised, as the zone thickness is increased, and in the impurity series Sn, Zn, Te.