锌黄锡矿
硒化铜铟镓太阳电池
光致发光
薄膜太阳能电池
材料科学
太阳能电池
铟
限制
载流子寿命
等效串联电阻
光电子学
捷克先令
硅
物理
机械工程
电压
量子力学
工程类
作者
Oki Gunawan,Teodor K. Todorov,David B. Mitzi
摘要
We present a device characterization study for hydrazine-processed kesterite Cu2ZnSn(Se,S)4 (CZTSSe) solar cells with a focus on pinpointing the main loss mechanisms limiting device efficiency. Temperature-dependent study and time-resolved photoluminescence spectroscopy on these cells, in comparison to analogous studies on a reference Cu(In,Ga)(Se,S)2 (CIGS) cell, reveal strong recombination loss at the CZTSSe/CdS interface, very low minority-carrier lifetimes, and high series resistance that diverges at low temperature. These findings help identify the key areas for improvement of these CZTSSe cells in the quest for a high-performance indium- and tellurium-free solar cell.
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