Double perovskite Sr2FeReO6 oxides: Structural, dielectric, magnetic, electrical, and optical properties

电介质 材料科学 钙钛矿(结构) 分析化学(期刊) 磁化 居里温度 四方晶系 矫顽力 铁磁性 磁滞 晶体结构 凝聚态物理 矿物学 光电子学 化学 磁场 结晶学 物理 色谱法 量子力学
作者
Kai Leng,Qingkai Tang,Zhiwei Wu,Kang Yi,Xinhua Zhu
出处
期刊:Journal of the American Ceramic Society [Wiley]
卷期号:105 (6): 4097-4107 被引量:23
标识
DOI:10.1111/jace.18367
摘要

Abstract Double perovskite Sr 2 FeReO 6 (SFRO) powders were synthesized by so‐gel process and annealed in argon atmosphere. Their structural, dielectric, magnetic, electrical, and optical properties were comprehensively investigated. It was found that the SFRO powders possessed a tetragonal crystal structure with I4/m space group and exhibited spherical shapes with some agglomeration due to the magnetic interactions between particles of the powders. Quantitative energy dispersive X‐ray spectrometer data revealed the atomic ratio of Sr, Fe, Re, and O elements close to the nominal values of 2:1:1:6. X‐ray photoemission spectroscopy spectra reveal two species of Re 5+ and Re 6‐7+ coexist in the SFRO powders. Sr, Fe, and O elements are present as Sr 2+ , Fe 3+ , and lattice oxygen, respectively. Dielectric property measurements revealed a Maxwell–Wagner type dielectric dispersion in the SFRO ceramics. Ferromagnetic behavior was verified by the observed magnetic hysteresis loops in the SFRO powders at 2 K and 300 K. The remanent magnetization and coercive field at 2 K were 8.23 emu/g and 3152 Oe, respectively, and the saturated magnetization was estimated to be 21.8 emu/g (or 2.0 μ B /f.u.), smaller than the theoretical value of 3.0 μ B /f.u. owing to the presence of the anti‐site defects. Magnetic Curie temperature ( T C ) was estimated to be 432.3 K. Intergranular tunneling magnetoresistance and hysteresis phenomena were observed in the SFRO powders at low temperatures, and the MR (2 K, 6 T) was measured to be −15% and −10% for MR (100 K, 6 T). Electrical transport and optical absorption measurements demonstrate the semiconducting nature of the SFRO with optical band gap of 1.39 eV. The electrical transport process follows the small polaron variable range hopping theory. The unique combination of high T C ferromagnetism with the semiconductivity enables the SFRO to be a promising candidate for spintronic devices.
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