材料科学
光电子学
薄脆饼
发光二极管
基质(水族馆)
蓝宝石
紫外线
激光器
二极管
制作
电流密度
波长
光学
物理
地质学
病理
海洋学
医学
替代医学
量子力学
作者
Moe Shimokawa,Yuya Yamada,Tomoya Omori,Kazuki Yamada,Ryota Hasegawa,Toma Nishibayashi,Ayumu Yabutani,Sho Iwayama,Tetsuya Takeuchi,Satoshi Kamiyama,Motoaki Iwaya,Hideto Miyake,Kohei Miyoshi,Koichi Naniwae,Akihiro Yamaguchi
标识
DOI:10.35848/1882-0786/ac5e64
摘要
Abstract We have successfully fabricated vertical LEDs by separating a 1 × 1 cm 2 wafer composed of deep-ultraviolet LED on a sapphire substrate from the substrate using a laser liftoff (LLO) method. Reproducible substrate separation was achieved by the LLO method using an Al 0.68 Ga 0.32 N underlayer film on an AlN template with periodic pillars. The fabricated vertical LED successfully demonstrated notable luminescence (peak wavelength: 298 nm) characteristics up to a current density of ∼43 kA cm −2 at room temperature and in pulsed drive, which is expected to be used in high-power LEDs and laser diodes.
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